Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO₂ Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60°C. As a result, the PERC solar cell of SiO₂-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO₂ ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO₂ ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na⁺ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO² thin films of the ARC layer is important. SiO² thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.