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Study on Auger Recombination Control using Barrier SiO2 in High-Quality Polysilicon/Tunneling oxide based Emitter Formation
고품질 polysilicon/tunneling oxide 기반의 에미터 형성 공정에서의 Auger 재결합 조절 연구
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Huiyeon Lee, SuBeom Hong, Donghwan Kim
이희연, 홍수범, 김동환
- Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon …
- Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiOx) and poly-Si. In poly-Si/SiOx based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO2) as a doping barrier before doping and analyzed the barrier effect of SiO2. In the experiments, p+ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high Voc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied Voc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results. - COLLAPSE
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Study on Auger Recombination Control using Barrier SiO2 in High-Quality Polysilicon/Tunneling oxide based Emitter Formation
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Research on Minimizing Output Degradation in HJT Cell Separation Using IR Laser Scribing
IR 레이저 스크라이빙에 의한 HJT 셀 분할 시 출력 감소율 최소화에 대한 연구
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Eunbi Lee, Sungmin Youn, Minseob Kim, Jinho Shin, Yu Jin Kim, Jeonghun Kim, Min-Joon Park, Chaehwan Jeong
이은비, 윤성민, 김민섭, 신진호, 김유진, 김정훈, 박민준, 정채환
- One of the current innovation trends in the solar industry is the increase in the size of silicon wafers. As the wafer …
- One of the current innovation trends in the solar industry is the increase in the size of silicon wafers. As the wafer size increases, the series resistance of the module rises, highlighting the need for research on methods for cutting and bonding solar cells. Among these, the Infrared (IR) laser scribing technique has been extensively researched. However, there is still insufficient optimization research regarding the thermal damage caused by lasers on the Transparent Conductive Oxide (TCO) layer of Heterojunction (HJT) solar cells. Therefore, in this study, we systematically varied conditions such as IR laser scribing speed, frequency, power, and the number of scribes to investigate their impact on the performance of cut cells under each condition. Additionally, we conducted a comparative analysis of thermal damage effects on the TCO layer based on varying scribing depths. - COLLAPSE
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Research on Minimizing Output Degradation in HJT Cell Separation Using IR Laser Scribing
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Current-Voltage Measurement Behavior of the CIGS Solar Module through the Evaluation of KS C 8562 Standard
KS C 8562 평가를 통한 CIGS 태양광모듈의 출력 거동 분석
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Kyung Soo Kim
김경수
- CIGS solar cells are thin film solar cells that have excellent light absorption coefficient and can be manufactured with high efficiency through …
- CIGS solar cells are thin film solar cells that have excellent light absorption coefficient and can be manufactured with high efficiency through the use of low materials. In Korea, they must pass KS certification for home and commercial installation. KS C 8562 is a standard for evaluating the durability of CIGS and thin film amorphous silicon solar modules and deals with contents such as light, temperature, humidity, and mechanical durability. Unlike general crystalline silicon solar modules, the CIGS solar module has a different behavior of output change through these environmental tests, so if it shows 90% or more of the rated output suggested by the manufacturer after the final test, it is judged to be a suitable product. In this paper, the output before and after individual tests was measured through the test method of KS C 8562 to observe the output change and to discover the vulnerabilities of the CIGS solar module when exposed to various environments. Through this, it was confirmed that humidity exposure was the most vulnerable and that it had output recovery characteristics for light (visible light and ultraviolet rays). This study attempted to present the output behavior characteristics and data of the CIGS module at the time when the high efficiency thin film photovoltaic module market is expected to be created in the future. - COLLAPSE
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Current-Voltage Measurement Behavior of the CIGS Solar Module through the Evaluation of KS C 8562 Standard
Current Photovoltaic Research
