Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, MoS₂, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of MoS₂/p-Si structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of MoS₂ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using MoS₂.