Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer’s characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.