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Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of Cu(In,Ga)Se2-based solar cells has been investigated. Wide bandgap (Ag,Cu)(In1-,Gax)Se2 (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the (Ag,Cu)(In1-x,Gax)Se2 (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the (Ag,Cu)(In1-x,Gax)Se2 (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency (Ag,Cu)(In1-x,x)Se2 solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters VOC = 0.810 V, JSC = 21.7 mA/cm 2 , and FF = 69.0%.
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- Publisher :Korea Photovoltaic Society
- Publisher(Ko) :한국태양광발전학회
- Journal Title :Current Photovoltaic Research
- Volume : 3
- No :1
- Pages :16~20


Current Photovoltaic Research






