Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are M_3%AZO_94%, M_4%AZO_93%-(MAZO) and M_3%IZO_94%, M_4%IZO_93%-(MIZO) respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at 300°C. All of the two thin film show good uniformity in field emission scanning electron microscopy image. M_3%AZO_94% thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of 8.16×10 ^-4 Ωcm, 4.372×10 ²⁰ /cm ³ , 17.5 cm ² /vs and 8.9Ω/sq respectively. Also M_3%AZO_94% thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.