Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

Aluminum oxide (Al₂O₃) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. Al₂O₃/SiNX passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, Al₂O₃, passivates the surface, while SiNX acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of Al₂O₃/SiNX stack layer with changing the conditions. For the post annealing temperature, it was found that 500 ℃ is the most suitable temperature to improvement surface passivation.