Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

A hybrid transparent conducting layer was applied for Si photodetector. To realize the hybrid transparent conducting layer, a 200 nm-thick ITO layer was deposited onto a Si substrate, following by a solution-processed AgNWs-coating on the ITO. The hybrid transparent conducting layer showed an excellent low electric resistance of 15.9 □/Ω with a high optical transparency of 86.89%. Due to these optical and electrical benefits, the hybrid transparent conductor-embedding Si diode provides an extremely high rectifying ratio of 3386. Under light-illumination, the hybrid transparent conductor device provides extremely high photoresponses for broad wavelengths. This implies that a functional design for hybrid transparent conductor is crucial for photoelectric devices and applications.