Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

In this paper, (Ga,Al):ZnO layers were deposited by sputtering to evaluate the device performance according to the thickness of the layer. As the thickness increased, low transmittance was observed, but the electrical resistance was improved. On the other hand, the highest efficiency was recorded at 400 nm device than a 500 nm of it. Therefore, since the critical thickness exists, it is necessary to set an adequate TCO layer thickness in consideration of the characteristics of the underlying film and the device.