Effect on the Double Stacked SiNX/SiOX Layers for n-type Bifacial Crystalline Silicon Solar Cells

Hyeong Gi Park; Jinjoo Park; Junsin Yi

doi:10.21218/CPR.2024.12.3.055

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2024 Vol.12, Issue 3 Preview Page Next Page

Effect on the Double Stacked SiN_X/SiO_X Layers for n-type Bifacial Crystalline Silicon Solar Cells n형 양면 결정질 실리콘 태양전지의 SiN_x/SiO_x 이중층 영향에 관한 연구

30 September 2024. pp. 55-60

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Abstract

This study explored the effect of double-stacked SiO_X/SiN_X layers on the passivation quality of n-type bifacial crystalline Si solar cells. SiO_X layers were deposited via PECVD under various conditions on n-type silicon wafers with a boron emitter. These layers were capped with SiN_X and thermally treated to optimize the passivation. The optimal conditions resulted in a minority-carrier lifetime of 268 μsec and an implied V_OC of 692 mV. The optimized SiO_X layer had a low interface defect density and high fixed negative charge. When applied to n-type solar cells, the SiO_X/SiN_X stack improved the performance, achieving a V_OC of 646 mV, J_SC of 39.3 mA/cm², FF of 78.06%, and efficiency of 19.82%, demonstrating the potential for higher efficiency in n-type silicon solar cells.

Keywords

n-type silicon

Passivation

SiO_X/SiN_X layers

PECVD

Solar cells

Minority carrier lifetime

References

M. A. Fazal, S. Rubaiee, Progress of PV cell technology: Feasibility of building materials, cost, performance, and stability, Sol. Energy. 258, 203-219 (2023).

10.1016/j.solener.2023.04.066

M. Lu, K. R. Mikeska, C. Ni, Y. Zhao, F. Chen, X. Xie, Y. Xu, C. Zhang, Screen-printable contacts for industrial N-TOPCon crystalline silicon solar cells, IEEE J. Photovolt. 12, 469-473 (2022).

10.1109/JPHOTOV.2021.3138248

S. W. Glunz, B. Steinhauser, J. I. Polzin, C. Luderer, B. Grübel, T. Niewelt, A. M. O. M. Okasha, M. Bories, H. Nagel, K. Krieg, F. Feldmann, A. Richter, M. Bivour, M. Hermle, Silicon‐based passivating contacts: The TOPCon route, Prog. Photovoltaics Res. Appl. 31, 341-359 (2021).

10.1002/pip.3522

H. Ullah, S. Czapp, S. Szultka, H. Tariq, U. B. Qasim, H. Imran, Crystalline silicon (c-Si)-Based Tunnel Oxide passivated contact (TOPCon) solar cells: A review, Energies. 16(2), 715 (2023).

10.3390/en16020715

J. Zheng, Z. Ying, Z. Yang, Z. Lin, H. Wei, L. Chen, X. Yang, Y. Zeng, X. Li, J. Ye, Polycrystalline silicon tunnelling recombination layers for high-efficiency perovskite/tunnel oxide passivating contact tandem solar cells, Nat. Energy. 8, 1250-1261 (2023).

10.1038/s41560-023-01382-w

H. Lin, G. Wang, Q. Su, C. Han, C. Xue, S. Yin, L. Fang, X. Xu, P. Gao, Unveiling the mechanism of attaining high fill factor in silicon solar cells, Prog. Photovoltaics Res. Appl. 32(6), 359-371 (2024).

10.1002/pip.3775

A. G. Aberle, R. Hezel, Progress in low-temperature surface passivation of silicon solar cells using remote-plasma silicon nitride, Prog. Photovoltaics Res. Appl. 5(1), 29-50 (1997).

10.1002/(SICI)1099-159X(199701/02)5:1<29::AID-PIP149>3.0.CO;2-M

G. Krugel, A. Sharma, W. Wolke, J. Rentsch, R. Preu, Study of hydrogenated AlN as an anti-reflective coating and for the effective surface passivation of silicon, Phys. Status Solidi RRL. 7(7), 457-460 (2013).

10.1002/pssr.201307153

J. A. Silva, S. Quoizola, E. Hernandez, L. Thomas, F. Massines, Silicon carbon nitride films as passivation and antireflective coatings for silicon solar cells, Surf. Coat. Technol. 242, 157-163 (2014).

10.1016/j.surfcoat.2014.01.037

S. Tahir, R. Saeed, A. Ashfaq, A. Ali, K. Mehmood, N. Almousa, E. A. Shokralla, R. R. Macadangdang Jr., A. H. Soeriyadi, R. S. Bonilla, Optical modeling and characterization of bifacial SiNx/AlOx dielectric layers for surface passivation and antireflection in PERC, Prog. Photovoltaics Res. Appl. 32(2), 63-72 (2024).

10.1002/pip.3745

J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, S. W. Glunz, High efficiency n-type Si solar cells on Al₂O₃-passivated boron emitters, Appl. Phys. Lett. 92(25), 253504 (2008).

10.1063/1.2945287

B. Hoex, J. Schmidt, P. Pohl, M. C. M. van de Sanden, W. M. M. Kessels, Silicon surface passivation by atomic layer deposited Al₂O₃, J. Appl. Phys. 104, 044903 (2008).

10.1063/1.2963707

J. Y. Hyun, S. Bae, Y. C. Nam, D. Kang, S.-W, Lee, D. Kim, J. Park, Y. Kang, and H.-S. Lee, Surface passivation of boron emitters on n-type silicon solar cells, Sustainability. 11(14), 3784 (2019).

10.3390/su11143784

V. A. Dao, V.-D. Nguyen, J. Heo, H. Choi, Y. Kim, N. Lakshminarayan, J. Yi, Effect of N₂O/SiH₄ flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation, Vacuum. 84(3), 410-414 (2010).

10.1016/j.vacuum.2009.09.002

E. Gil, J.B. Park, J.S. Oh, G.Y. Yeom, Characteristics of SiO_X thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O₂ flow rate, Thin Solid Films. 518, 6403-6407 (2010).

10.1016/j.tsf.2010.03.170

W. Gleine, J. Müller, Low-pressure chemical vapor deposition silicon-oxynitride films for integrated optics, Appl. Opt. 31(12), 2036-2040 (1992).

10.1364/AO.31.002036

Information

Publisher :Korea Photovoltaic Society
Publisher(Ko) :한국태양광발전학회
Journal Title :Current Photovoltaic Research
Volume : 12
No :3
Pages :55-60
Received Date : 2024-08-30
Revised Date : 2024-09-13
Accepted Date : 2024-09-19
DOI :https://doi.org/10.21218/CPR.2024.12.3.055

Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

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