Characteristics of VOx Thin Film,  NiOx Thin Film,  and CuIx Thin Film for Carrier Selective Contacts Solar Cells

Kiseok Jeon; Minseob Kim; Eunbi Lee; Jinho Shin; Sangwoo Lim; Chaehwan Jeong

doi:10.21218/CPR.2023.11.2.039

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2023 Vol.11, Issue 2 Next Page

Characteristics of VO_x Thin Film, NiO_x Thin Film, and CuI_x Thin Film for Carrier Selective Contacts Solar Cells 전하선택접촉 태양전지 적용을 위한 VO_x 박막, NiO_x 박막, CuI_x 박막의 특성 연구

30 June 2023. pp. 39-43

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Abstract

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

Keywords

Carrier selective contacts

Hole selective contacts

Copper iodide

Nickel oxide

Work function

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Information

Publisher :Korea Photovoltaic Society
Publisher(Ko) :한국태양광발전학회
Journal Title :Current Photovoltaic Research
Volume : 11
No :2
Pages :39-43
Received Date : 2023-03-09
Revised Date : 2023-04-28
Accepted Date : 2023-05-02
DOI :https://doi.org/10.21218/CPR.2023.11.2.039

Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

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