The Fabrication of the Cu(In, Ga)Se2 Absorber Layer Using Binary Precursor Films Deposited by Chemical Vapor Deposition

Gyeong A Lee; A Hyun Kim; Sung Wook Cho; Kang-Yong Lee; Chan-Wook Jeon

doi:10.21218/CPR.2021.9.4.137

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2021 Vol.9, Issue 4 Preview Page Next Page

The Fabrication of the Cu(In,Ga)Se₂ Absorber Layer Using Binary Precursor Films Deposited by Chemical Vapor Deposition 화학기상증착된 이원계 화합물 프리커서를 이용한 Cu(In,Ga)Se₂ 흡수층의 제조

31 December 2021. pp. 137-144

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Abstract

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se₂ (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe₂ and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of J_SC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of V_OC, J_SC, and FF could be greatly improved.

Keywords

Solar cells

Selenization

Chemical Vapor Deposition

Rapid Thermal Process

References

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Information

Publisher :Korea Photovoltaic Society
Publisher(Ko) :한국태양광발전학회
Journal Title :Current Photovoltaic Research
Volume : 9
No :4
Pages :137-144
Received Date : 2021-11-03
Revised Date : 2021-12-08
Accepted Date : 2021-12-12
DOI :https://doi.org/10.21218/CPR.2021.9.4.137

Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

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