Se Incorporation in VTD-SnS by RTA and Its Influence on Performance of Thin Film Solar Cells

Rahul Kumar Yadav; Yong Tae Kim; Pravin S. Pawar; Jaeyeong Heo

doi:10.21218/CPR.2022.10.2.033

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2022 Vol.10, Issue 2 Next Page

Se Incorporation in VTD-SnS by RTA and Its Influence on Performance of Thin Film Solar Cells

30 June 2022. pp. 33-38

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Abstract

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400°C with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a TRTA of 300°C. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.

Keywords

Tin sulfide

Thin-film solar cells

Se grading

Efficiency

Vapor transport deposition

Rapid thermal annealing

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Information

Publisher :Korea Photovoltaic Society
Publisher(Ko) :한국태양광발전학회
Journal Title :Current Photovoltaic Research
Volume : 10
No :2
Pages :33-38
Received Date : 2022-02-14
Revised Date : 2022-04-03
Accepted Date : 2022-04-04
DOI :https://doi.org/10.21218/CPR.2022.10.2.033

Current Photovoltaic Research ISSN:2288-3274(Print) 2508-125X(Online)

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